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Up to 6 GHz Low Noise Silicon DataSheet PDF
Manufacture
Part Number
Description
Siemens Semiconductor Group
CFY30
GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
Siemens Semiconductor Group
BAT14-03
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)
Siemens Semiconductor Group
BAT15-04
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
Siemens Semiconductor Group
BFQ28
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz
Siemens Semiconductor Group
BFY193
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
Siemens Semiconductor Group
BFR93P
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
Avago
AT-41486
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Agilent(Hewlett-Packard)
AT-41470
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Siemens Semiconductor Group
BAR63-03
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Siemens Semiconductor Group
Q62702-A1038
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
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